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51.
概述了电磁干扰(EMI)和电磁兼容(EMC)的基本知识,对DC/DC电源中的电磁干扰进行了综合分析,并给出了各自的解决方案。 相似文献
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Hisakatsu HamaKohji Tashiro 《Polymer》2003,44(22):6973-6988
Structural evolution in the isothermal crystallization process of polyoxymethylene from the molten state has been investigated by carrying out the time-resolved measurements of infrared spectra and synchrotron small angle X-ray scattering (SAXS) and wide angle X-ray scattering. In case of isothermal crystallization at 130 °C, for example, the infrared bands intrinsic of folded chain crystal (FCC) morphology appeared at first, and then the bands of extended chain crystal (ECC) morphology were detected with time delay of ca. 150 s. In the SAXS experiment at 130 °C, the lamellar stacking structure of the long period of ca. 15 nm was observed at first, which changed rapidly to ca. 12 nm in a short time. The SAXS peak with the long period of ca. 6 nm started to appear with a time delay of ca. 150 s after the initial lamellae appeared and coexisted with the initially-observed 12 nm peak. Judging from the timing to detect these characteristic infrared and SAXS signals, a good correspondence was found to exist between the stacked lamellar structure of 12 nm long period and FCC morphology and between the structure of 6 nm long period and ECC morphology. The quantitative analysis was made for the SAXS data on the basis of the lamellar insertion model combined with the paracrystalline theory of the second-kind of disorder. The following structural evolution was deduced from all these results. Immediately after the temperature jump from the melt to 130 °C, the stacked lamellar structure of FCC morphology was generated at first. New lamellae were formed from the amorphous region in between the originally-existing lamellae about 150 s later, where the random chain segments bridging the adjacent lamellae were extended to form the taut tie chains, giving infrared bands of ECC morphology. This inserted lamellar structure of 6 nm long period coexisted at a population of ca. 6% with the initially-formed lamellar stacking structure of 12 nm long period. When the experiment was made at 150 °C, only the formation of stacked lamellar structure of FCC morphology was observed and the insertion of new lamella did not occur. 相似文献
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随着集成电路规模的不断增大,电源网络的重要性日趋显著,电源网络的分布直接影响芯片的电压降(IR-drop)。一种布线后通过在空闲处插入电源桥和地桥的方法,可以在不增加芯片面积的情况下,改善IR-drop效应。实验结果表明在芯片布局利用率不高的情况下(70~75%),该方法可以使IR-drop得到明显的优化。 相似文献
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一种具有高电源抑制比的低功耗CMOS带隙基准电压源 总被引:12,自引:5,他引:7
文章设计了一种适用于CMOS工艺的带隙基准电压源电路,该电路采用工作在亚阈值区的电路结构,并采用高增益反馈回路,使其具有低功耗、低电压、高电源电压抑制比和较低温度系数等特点。 相似文献
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I. Tsukanov M. Hall 《International journal for numerical methods in engineering》2003,56(13):1949-1972
In this paper we discuss the data structure and algorithms for the direct application of generalized Leibnitz rules to the numerical computation of partial derivatives in forward mode. The proposed data structure provides constant time access to the partial derivatives, which accelerates the automatic differentiation computations. The interaction among elements of the data structure is explained by several numerical examples. The paper contains analysis of the developed data structure and algorithms. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
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